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Critical Condition in CuInAlSe2 Growth of Solar Cell Absorber

Undergraduate Theses from gdlhub / 2016-11-05 04:30:56
Oleh : Sujarwata Sujarwata, Fianti Fianti, J.Y. Jung, S.H. Lee, K.H. Kim, M.I. Amal, Telkomnika
Dibuat : 2016-09-01, dengan 1 file

Keyword : CIAS, Cu-deficient, PLD, thin film
Url : http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/3644

CuInAlSe2 (CIAS) thin films were prepared using pulsed laser deposition (PLD) and selenization. The PLD process utilized a certain kind of stacking order to deposit elemental films on glass substrates, layer by layer, for precursor preparation. They were designed to be Al- and Cu-deficient and selenized using two different heat treatment steps. According to its precursor compositional ratio, stacking order, and heat treatment, each CIAS film showed different properties and a critical condition. The crystalline phases, compositional ratio, morphology, and optical-electrical properties of the CIAS films are discussed here.

Deskripsi Alternatif :

CuInAlSe2 (CIAS) thin films were prepared using pulsed laser deposition (PLD) and selenization. The PLD process utilized a certain kind of stacking order to deposit elemental films on glass substrates, layer by layer, for precursor preparation. They were designed to be Al- and Cu-deficient and selenized using two different heat treatment steps. According to its precursor compositional ratio, stacking order, and heat treatment, each CIAS film showed different properties and a critical condition. The crystalline phases, compositional ratio, morphology, and optical-electrical properties of the CIAS films are discussed here.

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