GDL

Journal from gdlhub / 2020-01-09 09:55:40
Oleh : Ahmed M. Dinar, AS Mohd Zain, F. Salehuddin, M.K. Abdulhameed, Mowafak K. Mohsen, Mothana L. Attiah, Telkomnika
Dibuat : 2020-01-09, dengan 1 file

Keyword : Gouy-Chapman-Stern, high-k, ISFET sensitivity, stability, stern layer
Url : http://journal.uad.ac.id/index.php/TELKOMNIKA/issue/view/640
Sumber pengambilan dokumen : web

Utilizing Gouy-Chapman-Stern model can improve ISFET sensitivity and stability using Stern

layer in direct contact with electrolyte in ISFET sensing window. However, this model remains a challenge

in mathematical way, unless it’s re-applied using accurate simulation approaches. Here, we developed an

approach using a commercial Silvaco TCAD to re-apply Gouy-Chapman-Stern model as ISFET sensing

membrane to investigate its impact on sensitivity and stability of conventional ISFET. Sio2 material and

high-k Ta2O5 material have been examined based on Gouy-Chapman and Gouy-Chapman-Stern models.

Results shows that the ISFET sensitivity of SiO2 sensing membrane is improved from ~38 mV/pH to ~51

mV/pH and the VTH shift stability is also improved. Additionally, the results indicate that the sensitivity of

Ta2O5 is 59.03 mV/pH that hit the Nearnst Limit 59.3 mV/pH and achieves good agreements with

mathematical model and previous experimental results. In conclusion, this investigation introduces a real

validation of previous mathematical models using commercial TCAD approach rather than expensive

fabrication that paves the way for further analysis and optimization.

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